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C3 ChipZentronix

Nexperia USA Inc.

BC846AQB-QZ

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.23
  • 10+ pcs$0.22
  • 100+ pcs$0.21
  • 500+ pcs$0.19

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Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
110 @ 2mA, 5V
Maks. Çalışma Sıcaklığı
+ 150 C
Seri
Automotive, AEC-Q101
Current Collector Cutoff Max
15nA (ICBO)
Emitter Base Voltage Vebo
6 V
Collector Base Voltage Vcbo
80 V
Minimum Operating Temperature
- 55 C
Technology
Si
Pd Power Dissipation
420 mW
Configuration
Single
Montaj Stili
SMD/SMT
Tedarikçi Cihaz Paketi
DFN1110D-3
Gain Bandwidth Product Ft
100 MHz
Currentcollector Ic Max
100 mA
Continuous Collector Current
100 mA
Ürün Tipi
BJTs - Bipolar Transistors
Vce Saturation Max Ib Ic
400mV @ 5mA, 100mA
Paket
Tape & Reel (TR)
Kılıf / Paket
3-XDFN Exposed Pad
Dc Current Gain Hfe Max
220 at 2 mA, 5 V
RoHS
Details
Çalışma Sıcaklığı
150°C (TJ)
Fabrika Paket Adedi
5000
Transistor Polarity
NPN
Montaj Tipi
Surface Mount, Wettable Flank
Collector Emitter Voltage Vceo Max
65 V
Transistor Type
NPN
Maximum Dc Collector Current
200 mA
Part Aliases
934664017147
Collectoremitter Saturation Voltage
400 mV
Ürün Durumu
Active
Frequency Transition
100MHz
Dc Collectorbase Gain Hfe Min
110 at 2 mA, 5 V
Ambalaj
MouseReel
Power Max
340 mW
Voltage Collector Emitter Breakdown Max
65 V

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