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Nexperia USA Inc.

BC817-40QCH-QZ

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.27
  • 10+ pcs$0.25
  • 100+ pcs$0.24
  • 500+ pcs$0.22

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RoHS

Compliant

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Specifications

Configuration
Single
Seri
Automotive, AEC-Q101, BC817QCH-Q
Montaj Tipi
Surface Mount, Wettable Flank
Part Aliases
934664307147
Montaj Stili
SMD/SMT
Ürün Durumu
Active
Technology
Si
Transition Frequency
100MHz
Power Dissipation
575mW
Ürün Tipi
BJTs - Bipolar Transistors
Çalışma Sıcaklığı
175°C (TJ)
Collector Emitter Voltage Vceo Max
45 V
Emitter Base Voltage Vebo
5 V
Transistor Polarity
NPN
Collector Base Voltage Vcbo
50 V
Minimum Operating Temperature
- 55 C
Fabrika Paket Adedi
5000
Qualification
AEC-Q101
Transistor Type
NPN
Collectoremitter Saturation Voltage
700 mV
Pd Power Dissipation
575 mW
Voltage Collector Emitter Breakdown Max
45 V
Frequency Transition
100MHz
Ambalaj
MouseReel
Continuous Collector Current
500mA
Vce Saturation Max Ib Ic
700mV @ 50mA, 500mA
Power Max
455 mW
Dc Collectorbase Gain Hfe Min
250 at 100 mA, 1 V
Current Collector Cutoff Max
100nA (ICBO)
Maximum Dc Collector Current
1 A
Currentcollector Ic Max
500 mA
RoHS
Details
Kılıf / Paket
3-XDFN Exposed Pad
Tedarikçi Cihaz Paketi
DFN1412D-3
Maks. Çalışma Sıcaklığı
+ 175 C
Dc Current Gain Hfe Min Ic Vce
250 @ 100mA, 1V
Gain Bandwidth Product Ft
100 MHz
Dc Current Gain Hfe Max
600 at 100 mA, 1 V

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