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Nexperia USA Inc.

BC817-40QB-QZ

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.24
  • 10+ pcs$0.23
  • 100+ pcs$0.21
  • 500+ pcs$0.20

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RoHS

Compliant

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Specifications

Collectoremitter Saturation Voltage
700 mV
Transistor Type
NPN
Qualification
AEC-Q101
Voltage Collector Emitter Breakdown Max
45 V
Frequency Transition
100MHz
Ambalaj
MouseReel
Continuous Collector Current
500
Pd Power Dissipation
460 mW
Vce Saturation Max Ib Ic
700mV @ 50mA, 500mA
Power Max
350 mW
Paket
Tape & Reel (TR)
Dc Collectorbase Gain Hfe Min
250 at 100 mA, 1 V
RoHS
Details
Current Collector Cutoff Max
100nA (ICBO)
Maximum Dc Collector Current
1 A
Currentcollector Ic Max
500 mA
Maks. Çalışma Sıcaklığı
+ 150 C
Tedarikçi Cihaz Paketi
DFN1110D-3
Kılıf / Paket
3-XDFN Exposed Pad
Gain Bandwidth Product Ft
100 MHz
Dc Current Gain Hfe Min Ic Vce
250 @ 100mA, 1V
Dc Current Gain Hfe Max
600 at 100 mA, 1 V
Seri
Automotive, AEC-Q101
Configuration
Single
Montaj Stili
SMD/SMT
Montaj Tipi
Surface Mount, Wettable Flank
Part Aliases
934662686147
Ürün Durumu
Active
Power Dissipation
460
Ürün Tipi
BJTs - Bipolar Transistors
Technology
Si
Transition Frequency
100
Transistor Polarity
NPN
Çalışma Sıcaklığı
150°C (TJ)
Collector Emitter Voltage Vceo Max
45 V
Emitter Base Voltage Vebo
5 V
Fabrika Paket Adedi
5000
Collector Base Voltage Vcbo
50 V
Minimum Operating Temperature
- 55 C

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