Volume pricing
- 1+ pcs$0.27
- 10+ pcs$0.26
- 100+ pcs$0.24
- 500+ pcs$0.23
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Continuous Collector Current
- 500mA
- Ambalaj
- MouseReel
- Frequency Transition
- 100MHz
- Voltage Collector Emitter Breakdown Max
- 45 V
- Pd Power Dissipation
- 550 mW
- Transistor Type
- NPN
- Collectoremitter Saturation Voltage
- 700 mV
- Qualification
- AEC-Q101
- Gain Bandwidth Product Ft
- 100 MHz
- Dc Current Gain Hfe Min Ic Vce
- 160 @ 100mA, 1V
- Maks. Çalışma Sıcaklığı
- + 175 C
- Tedarikçi Cihaz Paketi
- DFN1110D-3
- Kılıf / Paket
- 3-XDFN Exposed Pad
- RoHS
- Details
- Currentcollector Ic Max
- 500 mA
- Maximum Dc Collector Current
- 500 mA
- Current Collector Cutoff Max
- 100nA (ICBO)
- Dc Collectorbase Gain Hfe Min
- 160
- Power Max
- 420 mW
- Montaj Stili
- SMD/SMT
- Part Aliases
- 934664314147
- Montaj Tipi
- Surface Mount, Wettable Flank
- Seri
- Automotive, AEC-Q101, BC817QBH-Q
- Configuration
- Single
- Fabrika Paket Adedi
- 5000
- Minimum Operating Temperature
- - 55 C
- Collector Base Voltage Vcbo
- 50 V
- Transistor Polarity
- NPN
- Emitter Base Voltage Vebo
- 5 V
- Çalışma Sıcaklığı
- 175°C (TJ)
- Collector Emitter Voltage Vceo Max
- 45 V
- Ürün Tipi
- BJTs - Bipolar Transistors
- Power Dissipation
- 550mW
- Transition Frequency
- 100MHz
- Technology
- Si
- Ürün Durumu
- Active
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