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BC817,235

Nexperia USA Inc.

BC817,235

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.04
  • 500+ pcs$0.03
  • 1000+ pcs$0.03
  • 2000+ pcs$0.02

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RoHS

Compliant

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Specifications

RoHS Durumu
ROHS3 Compliant
Tepe Reflow Süresi (maks. sn)
30
Transistor Type
NPN
Contact Plating
Tin
Vce Saturation Max Ib Ic
700mV @ 50mA, 500mA
Max Power Dissipation
250mW
Polaritychannel Type
NPN
Ambalaj
Tape & Reel (TR)
Yayın Yılı
2009
Current Collector Cutoff Max
100nA ICBO
Tepe Reflow Sıcaklığı (°C)
260
Max Collector Current
500mA
Terminal Formu
GULL WING
Transistor Element Material
SILICON
Dc Current Gain Hfe Min Ic Vce
100 @ 100mA 1V
Terminal Sayısı
3
Pin Sayısı
3
Kılıf / Paket
TO-236-3, SC-59, SOT-23-3
JESD-609 Kodu
e3
Montaj
Surface Mount
Terminal Pozisyonu
DUAL
Gain Bandwidth Product
100MHz
Temel Parça No
BC817
Seri
Automotive, AEC-Q101
Radyasyon Dayanımı
No
Pin Sayısı
3
Element Configuration
Single
Collector Emitter Voltage Vceo
45V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fabrika Tedarik Süresi
4 Weeks
Transistor Application
SWITCHING
Montaj Tipi
Surface Mount
Max Breakdown Voltage
45V
Akım
5A
ECCN Kodu
EAR99
Transition Frequency
100MHz
Power Dissipation
250mW
Number Of Elements
1
Collectoremitter Breakdown Voltage
45V
Collector Base Voltage Vcbo
50V

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