Volume pricing
- 1+ pcs$0.22
- 10+ pcs$0.20
- 100+ pcs$0.19
- 500+ pcs$0.18
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Collector Base Voltage Vcbo
- 50 V
- Minimum Operating Temperature
- - 55 C
- Fabrika Paket Adedi
- 5000
- Emitter Base Voltage Vebo
- 5 V
- Çalışma Sıcaklığı
- 175°C (TJ)
- Collector Emitter Voltage Vceo Max
- 45 V
- Transistor Polarity
- PNP
- Technology
- Si
- Transition Frequency
- 80MHz
- Ürün Tipi
- BJTs - Bipolar Transistors
- Power Dissipation
- 575mW
- Ürün Durumu
- Active
- Part Aliases
- 934664287147
- Montaj Tipi
- Surface Mount, Wettable Flank
- Montaj Stili
- SMD/SMT
- Configuration
- Single
- Seri
- Automotive, AEC-Q101, BC807QCH-Q
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 100mA, 1V
- Gain Bandwidth Product Ft
- 80 MHz
- Maks. Çalışma Sıcaklığı
- + 175 C
- Kılıf / Paket
- 3-XDFN Exposed Pad
- Tedarikçi Cihaz Paketi
- DFN1412D-3
- Currentcollector Ic Max
- 500 mA
- Maximum Dc Collector Current
- 500 mA
- Current Collector Cutoff Max
- 100nA (ICBO)
- RoHS
- Details
- Dc Collectorbase Gain Hfe Min
- 100
- Power Max
- 455 mW
- Vce Saturation Max Ib Ic
- 700mV @ 50mA, 500mA
- Pd Power Dissipation
- 575 mW
- Frequency Transition
- 80MHz
- Ambalaj
- MouseReel
- Continuous Collector Current
- 500mA
- Voltage Collector Emitter Breakdown Max
- 45 V
- Qualification
- AEC-Q101
- Collectoremitter Saturation Voltage
- 700 mV
- Transistor Type
- PNP
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