Volume pricing
- 1+ pcs$0.26
- 10+ pcs$0.24
- 100+ pcs$0.23
- 500+ pcs$0.21
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Contact Plating
- Tin
- Transistor Type
- NPN
- Vce Saturation Max Ib Ic
- 600mV @ 200mA, 2A
- Max Power Dissipation
- 420mW
- Polaritychannel Type
- NPN
- Yayın Yılı
- 2011
- Ambalaj
- Tape & Reel (TR)
- Current Collector Cutoff Max
- 100nA ICBO
- Max Collector Current
- 2A
- Power Max
- 420mW
- Terminal Formu
- NO LEAD
- Transistor Element Material
- SILICON
- Terminal Sayısı
- 3
- Dc Current Gain Hfe Min Ic Vce
- 85 @ 500mA 1V
- Case Connection
- COLLECTOR
- Pin Sayısı
- 3
- Kılıf / Paket
- 3-PowerUDFN
- JESD-609 Kodu
- e3
- Configuration
- SINGLE
- Montaj
- Surface Mount
- Terminal Pozisyonu
- DUAL
- Pin Sayısı
- 3
- Collector Emitter Voltage Vceo
- 20V
- Fabrika Tedarik Süresi
- 8 Weeks
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Transistor Application
- SWITCHING
- Montaj Tipi
- Surface Mount
- Transition Frequency
- 170MHz
- Max Breakdown Voltage
- 20V
- Power Dissipation
- 1.65W
- Number Of Elements
- 1
- Collectoremitter Breakdown Voltage
- 20V
- Collector Base Voltage Vcbo
- 32V
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- 150°C TJ
- Emitter Base Voltage Vebo
- 5V
- Frekans
- 170MHz
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