Volume pricing
- 1+ pcs$0.42
- 10+ pcs$0.39
- 100+ pcs$0.37
- 500+ pcs$0.35
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Parça Durumu
- Active
- Transistor Type
- NPN
- Vce Saturation Max Ib Ic
- 500mV @ 50mA, 500mA
- Dc Current Gain Hfe Min Ic Vce
- 100 @ 150mA 2V
- Yayın Yılı
- 2011
- Power Max
- 650mW
- Kılıf / Paket
- 3-PowerUDFN
- Fabrika Tedarik Süresi
- 8 Weeks
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- 150°C TJ
- Emitter Base Voltage Vebo
- 5V
- Contact Plating
- Tin
- Polaritychannel Type
- NPN
- Terminal Formu
- NO LEAD
- Pin Sayısı
- 3
- Transistor Application
- SWITCHING
- Montaj Tipi
- Surface Mount
- Frekans
- 180MHz
- Collector Base Voltage Vcbo
- 60V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Transition Frequency
- 180MHz
- Max Breakdown Voltage
- 60V
- Current Collector Cutoff Max
- 100nA ICBO
- Pin Sayısı
- 3
- Case Connection
- COLLECTOR
- Number Of Elements
- 1
- Terminal Pozisyonu
- DUAL
- Power Dissipation
- 1.65W
- Max Collector Current
- 1A
- Ambalaj
- Tape & Reel (TR)
- Max Power Dissipation
- 650mW
- Collector Emitter Voltage Vceo
- 60V
- JESD-609 Kodu
- e3
- Collectoremitter Breakdown Voltage
- 60V
- Configuration
- SINGLE
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