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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Surface Mount
- Drain Currentmax Abs Id
- 0.45A
- Rise Time
- 6ns
- Yüzey Montaj
- YES
- Turn On Delay Time
- 5 ns
- Vgs Max
- ±20V
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 450mA Ta
- Power Dissipation
- 715mW
- Rds On Max Id Vgs
- 1.6 Ω @ 450mA, 10V
- Vgsth Max Id
- 2.1V @ 250μA
- Gate To Source Voltage Vgs
- 20V
- Terminal Pozisyonu
- BOTTOM
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 1
- Radyasyon Dayanımı
- No
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2017
- Pin Sayısı
- 3
- Power Dissipation Max
- 360mW Ta
- Parça Durumu
- Last Time Buy
- Contact Plating
- Tin
- Kılıf / Paket
- 3-XFDFN
- Continuous Drain Current Id
- 450mA
- Ambalaj
- Tape & Reel (TR)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Turn Off Delay Time
- 12 ns
- Max Dual Supply Voltage
- 60V
- Element Configuration
- Single
- JESD-609 Kodu
- e3
- Case Connection
- DRAIN
- Terminal Sayısı
- 3
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Drive Voltage Max Rds On Min Rds On
- 10V
- Input Capacitance Ciss Max Vds
- 50pF @ 10V
- Fall Time Typ
- 7 ns
- Drain To Source Breakdown Voltage
- 60V
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
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