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Specifications
- Dc Current Gain Hfe Max
- 800 at 2 mA, 5 V
- RoHS
- Details
- Çalışma Sıcaklığı
- 150°C (TJ)
- Kılıf / Paket
- TO-236AB-3
- Qualification
- AEC-Q101
- Maximum Dc Collector Current
- 200 mA
- Transistor Type
- NPN
- Collectoremitter Saturation Voltage
- 200 mV
- Part Aliases
- 934663633235
- Transistor Polarity
- NPN
- Transition Frequency
- 100
- Montaj Tipi
- Surface Mount
- Fabrika Paket Adedi
- 10000
- Collector Emitter Voltage Vceo Max
- 45 V
- Dc Collectorbase Gain Hfe Min
- 420 at 2 mA, 5 V
- Ambalaj
- MouseReel
- Power Max
- 250 mW
- Frequency Transition
- 100MHz
- Voltage Collector Emitter Breakdown Max
- 45 V
- Ürün Durumu
- Active
- Current Collector Cutoff Max
- 15nA (ICBO)
- Emitter Base Voltage Vebo
- 6 V
- Pd Power Dissipation
- 250 mW
- Minimum Operating Temperature
- - 65 C
- Collector Base Voltage Vcbo
- 50 V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Dc Current Gain Hfe Min Ic Vce
- 420 @ 2mA, 5V
- Seri
- Automotive, AEC-Q101, BC847x-Q
- Configuration
- Single
- Montaj Stili
- SMD/SMT
- Power Dissipation
- 250
- Continuous Collector Current
- 100 mA
- Currentcollector Ic Max
- 100 mA
- Gain Bandwidth Product Ft
- 100 MHz
- Tedarikçi Cihaz Paketi
- TO-236AB
- Paket
- Bulk
- Vce Saturation Max Ib Ic
- 400mV @ 5mA, 100mA
- Temel Ürün No
- BC847
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