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RoHS
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Technical team support
Specifications
- Ds Breakdown Voltagemin
- 60 V
- Transistor Element Material
- SILICON
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Number Of Terminals
- 3
- Polaritychannel Type
- N-CHANNEL
- Additional Feature
- GATE PROTECTED
- Configuration
- SINGLE WITH BUILT-IN DIODE
- Operating Mode
- ENHANCEMENT MODE
- Package Shape
- RECTANGULAR
- Qualification Status
- Not Qualified
- JESD-609 Kodu
- e0
- Üretici Parça No
- 2SK2159
- Risk Rank
- 5.31
- Drain Currentmax Id
- 2 A
- Drain Currentmax Abs Id
- 2 A
- Yüzey Montaj
- YES
- Operating Temperaturemax
- 150 °C
- Number Of Elements
- 1
- Terminal Pozisyonu
- SINGLE
- Package Body Material
- PLASTIC/EPOXY
- Case Connection
- DRAIN
- Pulsed Drain Currentmax Idm
- 4 A
- Rohs Code
- No
- Package Style
- SMALL OUTLINE
- ECCN Kodu
- EAR99
- Ihs Manufacturer
- RENESAS ELECTRONICS CORP
- Drainsource On Resistancemax
- 0.5 Ω
- Pin Sayısı
- 3
- Terminal Formu
- FLAT
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- REACH Uyumluluk Kodu
- unknown
- Terminal Kaplaması
- Tin/Lead (Sn/Pb)
- Package Description
- SMALL OUTLINE, R-PSSO-F3
- Power Dissipationmax Abs
- 2 W
- Transistor Application
- SWITCHING
- Part Life Cycle Code
- Obsolete
- Jesd30 Code
- R-PSSO-F3
- Reflow Temperaturemax S
- NOT SPECIFIED
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