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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Highest Frequency Band
- VERY HIGH FREQUENCY B
- Yükseklik
- 5.33 mm
- Fet Technology
- JUNCTION
- Number Of Elements
- 1
- Maks. Çalışma Sıcaklığı
- 150 °C
- Weight
- 200.998119 mg
- Kurşunsuz
- Lead Free
- Min. Çalışma Sıcaklığı
- -55 °C
- Ambalaj
- Bulk
- Yüzey Montaj
- NO
- Breakdown Voltage V
- -30 V
- Tedarikçi Cihaz Paketi
- TO-92-3
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Pin Sayısı
- 3
- Yayın Yılı
- 2004
- Transistor Type
- N-Channel JFET
- Temel Parça No
- 2N5245
- Nominal Gerilim
- 30V
- Drain To Source Voltage Vdss
- 30 V
- Transistor Element Material
- SILICON
- Jesd30 Code
- O-PBCY-T3
- Power Dissipation
- 350 mW
- Additional Feature
- LOW NOISE
- Qualification Status
- COMMERCIAL
- Uzunluk
- 5.2 mm
- Terminal Formu
- THROUGH-HOLE
- Pin Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- AMPLIFIER
- Current Rating Amps
- 15mA
- Genişlik
- 4.19 mm
- Parça Durumu
- Obsolete
- Operating Mode
- DEPLETION MODE
- Continuous Drain Current Id
- 10 mA
- Max Power Dissipation
- 350 mW
- Akım Değeri
- 15 mA
- Terminal Pozisyonu
- BOTTOM
- Montaj
- Through Hole
- Voltage Rating Dc
- 6 V
- Element Configuration
- Single
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