2N4393

Specifications

Frequency Stability

±15ppm

Power Dissipation Max

1.8W

Montaj

Through Hole

Çalışma Sıcaklığı

-40°C ~ 85°C

Capacitance Input

14pF

Kurşunsuz

Lead Free

Current Drain Idss Vds Vgs0

5 mA @ 20 V

Maximum Drain Gate Voltage

40 V

Tip

XO (Standard)

Lead Free Status Rohs Status

Lead free / RoHS Compliant

Pin Sayısı

3

Number Of Terminals

3

Input Capacitance Ciss Max Vds

14pF @ 20V

Output

CMOS

Configuration

Single

Risk Rank

1.04

Ihs Manufacturer

CENTRAL SEMICONDUCTOR CORP

Fabrika Paket Adedi

1

Function

Standby (Power Down)

Package Style

CYLINDRICAL

Vds Drainsource Breakdown Voltage

0.4 V

Drainsource On Resistancemax

100 Ω

Ambalaj

Bulk

Operating Temperaturemin

-65 °C

Voltage Cutoff Vgs Off Id

500 mV @ 1 nA

Transistor Element Material

SILICON

Power Max

1.8 W

Operating Temperaturemax

175 °C

Rds On Drainsource Resistance

100 Ohms

Tedarikçi Cihaz Paketi

TO-18

Gate To Source Voltage Vgs

40V

Drain To Source Resistance

100Ohm

Terminal Formu

WIRE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Id Continuous Drain Current

12 mA

Samacsys Description

JFET 40V N-Ch JFET 40Vgs 50mA 1.8W TO-18

Fet Type

N-Channel

Package Body Material

METAL

Continuous Drain Current Id

100pA

Reflow Temperaturemax S

NOT SPECIFIED