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VP3203N8-G

Microchip Technology

VP3203N8-G

Single MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Fet Type
P-Channel
Montaj
Surface Mount
Tepe Reflow Sıcaklığı (°C)
260
Turn Off Delay Time
25 ns
Additional Feature
FAST SWITCHING
Vgsth Max Id
3.5V @ 10mA
Kılıf / Paket
TO-243AA
Yükseklik
1.6mm
Drain To Source Voltage Vdss
30V
Rise Time
15ns
RoHS Durumu
ROHS3 Compliant
Uzunluk
4.6mm
Drainsource On Resistancemax
0.6Ohm
Drain To Source Breakdown Voltage
-30V
Power Dissipation
1.6W
Number Of Channels
1
Input Capacitance Ciss Max Vds
300pF @ 25V
Yayın Yılı
2013
Pulsed Drain Currentmax Idm
4A
Element Configuration
Single
JESD-609 Kodu
e3
Genişlik
2.6mm
Transistor Element Material
SILICON
ECCN Kodu
EAR99
Fabrika Tedarik Süresi
1 Weeks
Turn On Delay Time
10 ns
Gate To Source Voltage Vgs
20V
Terminal Formu
FLAT
Tepe Reflow Süresi (maks. sn)
40
Operating Mode
ENHANCEMENT MODE
Weight
52.786812mg
Jesd30 Code
R-PSSO-F3
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Continuous Drain Current Id
1.1A
Kurşunsuz
Lead Free
Montaj Tipi
Surface Mount
Power Dissipation Max
1.6W Ta
Ambalaj
Tape & Reel (TR)
Current Continuous Drain Id25
1.1A Tj
Nem Hassasiyeti (MSL)
1 (Unlimited)

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