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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn Off Delay Time
- 45 ns
- Vgsth Max Id
- 3.5V @ 1mA
- Terminal Formu
- WIRE
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Fet Type
- P-Channel
- Gate To Source Voltage Vgs
- 20V
- Montaj
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Drain To Source Voltage Vdss
- 500V
- Uzunluk
- 5.21mm
- RoHS Durumu
- ROHS3 Compliant
- Rise Time
- 25ns
- Terminal Pozisyonu
- BOTTOM
- Drain To Source Breakdown Voltage
- -500V
- Power Dissipation
- 1W
- Number Of Channels
- 1
- Continuous Drain Current Id
- 100mA
- Input Capacitance Ciss Max Vds
- 190pF @ 25V
- Operating Mode
- ENHANCEMENT MODE
- Weight
- 453.59237mg
- Yükseklik
- 5.33mm
- Feedback Capmax Crss
- 20 pF
- Current Continuous Drain Id25
- 100mA Tj
- Ambalaj
- Bulk
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Element Configuration
- Single
- Transistor Application
- SWITCHING
- Rds On Max Id Vgs
- 30 Ω @ 100mA, 10V
- Vgs Max
- ±20V
- Yayın Yılı
- 2007
- Power Dissipation Max
- 740mW Ta
- Montaj Tipi
- Through Hole
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Number Of Elements
- 1
- Radyasyon Dayanımı
- No
- JESD-609 Kodu
- e3
- Genişlik
- 4.19mm
- Parça Durumu
- Active
- Pin Sayısı
- 3
- Transistor Element Material
- SILICON
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