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VP2206N2

Microchip Technology

VP2206N2

Single MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Gate To Source Voltage Vgs
20V
Drain Currentmax Abs Id
0.75A
Terminal Formu
WIRE
Operating Mode
ENHANCEMENT MODE
Continuous Drain Current Id
750mA
Drive Voltage Max Rds On Min Rds On
5V 10V
Power Dissipation Max
360mW Tc
Montaj Tipi
Through Hole
Transistor Application
SWITCHING
Vgs Max
±20V
Rds On Max Id Vgs
900m Ω @ 3.5A, 10V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Current Continuous Drain Id25
750mA Tj
Ambalaj
Bulk
Fall Time Typ
22 ns
Terminal Sayısı
3
Terminal Kaplaması
NICKEL GOLD
Parça Durumu
Active
Number Of Elements
1
Case Connection
DRAIN
Radyasyon Dayanımı
No
Çalışma Sıcaklığı
-55°C~150°C TJ
Montaj
Through Hole
Fet Type
P-Channel
Kılıf / Paket
TO-205AD, TO-39-3 Metal Can
Turn Off Delay Time
16 ns
Additional Feature
HIGH INPUT IMPEDANCE
Vgsth Max Id
3.5V @ 10mA
Yükseklik
6.6mm
Feedback Capmax Crss
40 pF
Uzunluk
9.4mm
RoHS Durumu
Non-RoHS Compliant
Rise Time
16ns
Drainsource On Resistancemax
0.9Ohm
Terminal Pozisyonu
BOTTOM
Drain To Source Breakdown Voltage
-60V
Number Of Channels
1
Power Dissipation
6W
Input Capacitance Ciss Max Vds
450pF @ 25V
Drain To Source Voltage Vdss
60V

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