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Specifications
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Turn Off Delay Time
- 10 ns
- Genişlik
- 4.19mm
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Element Configuration
- Single
- Tepe Reflow Süresi (maks. sn)
- NOT APPLICABLE
- Power Dissipation
- 1W
- Fall Time Typ
- 5 ns
- Number Of Channels
- 1
- Rds On Max Id Vgs
- 125 Ω @ 10mA, 10V
- Vgs Max
- ±20V
- Terminal Pozisyonu
- BOTTOM
- Pin Sayısı
- 3
- Yükseklik
- 5.33mm
- Montaj Tipi
- Through Hole
- Fet Type
- P-Channel
- Turn On Delay Time
- 10 ns
- Number Of Elements
- 1
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- -54mA
- Drain To Source Voltage Vdss
- 500V
- Rise Time
- 8ns
- Uzunluk
- 5.21mm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- -500V
- Drain Currentmax Abs Id
- 0.054A
- Power Dissipation Max
- 1W Tc
- Parça Durumu
- Active
- Contact Plating
- Tin
- Montaj
- Through Hole
- Terminal Sayısı
- 3
- Weight
- 453.59237mg
- Tepe Reflow Sıcaklığı (°C)
- NOT APPLICABLE
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Yayın Yılı
- 2013
- Vgsth Max Id
- 4.5V @ 1mA
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 16 Weeks
- Current Continuous Drain Id25
- 54mA Tj
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