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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Terminal Pozisyonu
- BOTTOM
- Rds On Max Id Vgs
- 8 Ω @ 500mA, 10V
- Vgs Max
- ±20V
- Number Of Channels
- 1
- Power Dissipation
- 1W
- Fall Time Typ
- 4 ns
- Element Configuration
- Single
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Genişlik
- 4.19mm
- Turn Off Delay Time
- 8 ns
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 4 ns
- Number Of Elements
- 1
- Fet Type
- P-Channel
- Montaj Tipi
- Through Hole
- Drainsource On Resistancemax
- 8Ohm
- Yükseklik
- 5.33mm
- Terminal Kaplaması
- Matte Tin (Sn)
- Pin Sayısı
- 3
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Weight
- 453.59237mg
- Terminal Sayısı
- 3
- Montaj
- Through Hole
- Parça Durumu
- Active
- Drain Currentmax Abs Id
- 0.25A
- Power Dissipation Max
- 1W Tc
- Drain To Source Breakdown Voltage
- -40V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Uzunluk
- 5.21mm
- Rise Time
- 3ns
- Drain To Source Voltage Vdss
- 40V
- Continuous Drain Current Id
- 250mA
- Radyasyon Dayanımı
- No
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 60pF @ 25V
- Gate To Source Voltage Vgs
- 20V
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
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