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Specifications
- Number Of Channels
- 1
- Pulsed Drain Currentmax Idm
- 8A
- Gate To Source Voltage Vgs
- 20V
- Turn On Delay Time
- 10 ns
- Uzunluk
- 4.6mm
- Continuous Drain Current Id
- 1.5A
- Genişlik
- 2.6mm
- Power Dissipation Max
- 1.6W Ta
- Terminal Kaplaması
- Matte Tin (Sn) - annealed
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 6 Weeks
- JESD-609 Kodu
- e3
- Terminal Sayısı
- 3
- Turn Off Timemax Toff
- 50ns
- Case Connection
- DRAIN
- Input Capacitance Ciss Max Vds
- 300pF @ 25V
- Current Continuous Drain Id25
- 1.5A Tj
- Fet Type
- N-Channel
- Qualification Status
- Not Qualified
- Power Dissipation
- 1.6W
- Rds On Max Id Vgs
- 300m Ω @ 1.5A, 10V
- Fall Time Typ
- 15 ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 50V
- Weight
- 52.786812mg
- Rise Time
- 15ns
- Vgs Max
- ±20V
- Terminal Formu
- FLAT
- Transistor Element Material
- SILICON
- Drainsource On Resistancemax
- 0.3Ohm
- Feedback Capmax Crss
- 30 pF
- Jesd30 Code
- R-PSSO-F3
- ECCN Kodu
- EAR99
- Tepe Reflow Sıcaklığı (°C)
- 260
- Additional Feature
- HIGH INPUT IMPEDANCE
- Pin Sayısı
- 4
- Vgsth Max Id
- 2.4V @ 10mA
- Montaj Tipi
- Surface Mount
- Yükseklik
- 1.6mm
- Operating Mode
- ENHANCEMENT MODE
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