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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 1W
- Rds On Max Id Vgs
- 300m Ω @ 3A, 10V
- Fall Time Typ
- 25 ns
- Ambalaj
- Bulk
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Turn Off Delay Time
- 25 ns
- Drain To Source Breakdown Voltage
- 50V
- Yayın Yılı
- 2013
- Weight
- 453.59237mg
- Current Continuous Drain Id25
- 1.2A Tj
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Kurşunsuz
- Lead Free
- Number Of Elements
- 1
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Input Capacitance Ciss Max Vds
- 300pF @ 25V
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 3
- Terminal Kaplaması
- Matte Tin (Sn)
- Montaj Tipi
- Through Hole
- Vgsth Max Id
- 2.4V @ 10mA
- Yükseklik
- 5.33mm
- Montaj
- Through Hole
- Terminal Pozisyonu
- BOTTOM
- Fabrika Tedarik Süresi
- 6 Weeks
- Additional Feature
- HIGH INPUT IMPEDANCE
- Continuous Drain Current Id
- 1.2A
- Pin Sayısı
- 3
- Uzunluk
- 5.21mm
- Genişlik
- 4.19mm
- Power Dissipation Max
- 1W Tc
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 10 ns
- ECCN Kodu
- EAR99
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