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VN2450N8-G

Microchip Technology

VN2450N8-G

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Power Dissipation Max
1.6W Ta
Genişlik
2.6mm
Drain Currentmax Abs Id
0.25A
Uzunluk
4.6mm
Continuous Drain Current Id
250mA
Montaj
Surface Mount
Fabrika Tedarik Süresi
6 Weeks
Number Of Channels
1
Gate To Source Voltage Vgs
20V
Pulsed Drain Currentmax Idm
0.75A
Turn On Delay Time
10 ns
Current Continuous Drain Id25
250mA Tj
Fet Type
N-Channel
Nem Hassasiyeti (MSL)
1 (Unlimited)
Fall Time Typ
10 ns
Rds On Max Id Vgs
13 Ω @ 400mA, 10V
Power Dissipation
1.6W
Qualification Status
Not Qualified
Weight
52.786812mg
Drain To Source Breakdown Voltage
500V
JESD-609 Kodu
e3
Terminal Sayısı
3
Input Capacitance Ciss Max Vds
150pF @ 25V
Case Connection
DRAIN
Additional Feature
FAST SWITCHING
Tepe Reflow Sıcaklığı (°C)
260
Pin Sayısı
3
Yükseklik
1.6mm
Montaj Tipi
Surface Mount
Vgsth Max Id
4V @ 1mA
Rise Time
10ns
Terminal Formu
FLAT
Vgs Max
±20V
Transistor Element Material
SILICON
ECCN Kodu
EAR99
Çalışma Sıcaklığı
-55°C~150°C TJ
Parça Durumu
Active
Ambalaj
Tape & Reel (TR)
Tepe Reflow Süresi (maks. sn)
40
Yayın Yılı
2013

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