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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Number Of Elements
- 1
- Input Capacitance Ciss Max Vds
- 60pF @ 25V
- Element Configuration
- Single
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Terminal Sayısı
- 3
- Transistor Application
- SWITCHING
- Ambalaj
- Bulk
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Dissipation
- 1W
- Rds On Max Id Vgs
- 5 Ω @ 500mA, 10V
- Yayın Yılı
- 2013
- Weight
- 219.992299mg
- Drain To Source Breakdown Voltage
- 60V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Current Continuous Drain Id25
- 310mA Tj
- Parça Durumu
- Active
- Fet Type
- N-Channel
- Transistor Element Material
- SILICON
- Drainsource On Resistancemax
- 5Ohm
- Feedback Capmax Crss
- 5 pF
- ECCN Kodu
- EAR99
- Number Of Channels
- 1
- Radyasyon Dayanımı
- No
- Vgs Max
- ±30V
- Gate To Source Voltage Vgs
- 30V
- Montaj
- Through Hole
- Terminal Kaplaması
- Matte Tin (Sn)
- Montaj Tipi
- Through Hole
- Yükseklik
- 5.33mm
- Vgsth Max Id
- 2.5V @ 1mA
- Terminal Pozisyonu
- BOTTOM
- Fabrika Tedarik Süresi
- 6 Weeks
- Genişlik
- 4.19mm
- Power Dissipation Max
- 1W Tc
- Continuous Drain Current Id
- 310mA
- Pin Sayısı
- 3
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