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RoHS
Compliant
Support
Technical team support
Specifications
- JESD-609 Kodu
- e3
- Operating Mode
- ENHANCEMENT MODE
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 3
- Number Of Elements
- 1
- RoHS Durumu
- ROHS3 Compliant
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Element Configuration
- Single
- Input Capacitance Ciss Max Vds
- 190pF @ 20V
- Parça Durumu
- Active
- Current Continuous Drain Id25
- 640mA Tj
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Rds On Max Id Vgs
- 1.2 Ω @ 1A, 10V
- Power Dissipation
- 1W
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ambalaj
- Bulk
- Drain To Source Breakdown Voltage
- 30V
- Weight
- 453.59237mg
- Yayın Yılı
- 2013
- Radyasyon Dayanımı
- No
- Number Of Channels
- 1
- Vgs Max
- ±30V
- Gate To Source Voltage Vgs
- 30V
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Feedback Capmax Crss
- 50 pF
- Additional Feature
- LOW THRESHOLD
- Continuous Drain Current Id
- 640mA
- Uzunluk
- 5.21mm
- Pin Sayısı
- 3
- Power Dissipation Max
- 1W Tc
- Genişlik
- 4.19mm
- Drain Currentmax Abs Id
- 0.64A
- Montaj Tipi
- Through Hole
- Vgsth Max Id
- 2.5V @ 1mA
- Yükseklik
- 5.33mm
- Terminal Kaplaması
- Matte Tin (Sn)
- Montaj
- Through Hole
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