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TP2640LG-G

Microchip Technology

TP2640LG-G

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Additional Feature
LOGIC LEVEL COMPATIBLE
Tepe Reflow Sıcaklığı (°C)
260
Power Dissipation Max
740mW Ta
Genişlik
3.9mm
Continuous Drain Current Id
-210mA
Pin Sayısı
8
Uzunluk
4.9mm
Montaj
Surface Mount
Montaj Tipi
Surface Mount
Vgsth Max Id
2V @ 1mA
Yükseklik
1.65mm
Drain To Source Voltage Vdss
400V
Configuration
SINGLE WITH BUILT-IN DIODE
Terminal Kaplaması
Matte Tin (Sn)
Fabrika Tedarik Süresi
6 Weeks
Terminal Pozisyonu
DUAL
Number Of Channels
1
Rise Time
15ns
Terminal Formu
GULL WING
Gate To Source Voltage Vgs
20V
Vgs Max
±20V
Turn On Delay Time
10 ns
Transistor Element Material
SILICON
ECCN Kodu
EAR99
Çalışma Sıcaklığı
-55°C~150°C TJ
Parça Durumu
Active
Current Continuous Drain Id25
86mA Tj
Fet Type
P-Channel
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ambalaj
Tape & Reel (TR)
Fall Time Typ
15 ns
Tepe Reflow Süresi (maks. sn)
40
Rds On Max Id Vgs
15 Ω @ 300mA, 10V
Power Dissipation
1.3W
Qualification Status
Not Qualified
Weight
84.99187mg
Yayın Yılı
2013
Drain To Source Breakdown Voltage
-400V
Turn Off Delay Time
60 ns
Drive Voltage Max Rds On Min Rds On
2.5V 10V

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