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TP2635N3-G

Microchip Technology

TP2635N3-G

Single MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Fabrika Tedarik Süresi
5 Weeks
Terminal Pozisyonu
BOTTOM
Montaj Tipi
Through Hole
Vgsth Max Id
2V @ 1mA
Yükseklik
5.33mm
Drain To Source Voltage Vdss
350V
Terminal Kaplaması
Matte Tin (Sn)
Montaj
Through Hole
Uzunluk
5.21mm
Pin Sayısı
3
Continuous Drain Current Id
-180mA
Power Dissipation Max
1W Ta
Genişlik
4.19mm
Tepe Reflow Sıcaklığı (°C)
NOT APPLICABLE
Additional Feature
LOGIC LEVEL COMPATIBLE
ECCN Kodu
EAR99
Turn On Delay Time
10 ns
Transistor Element Material
SILICON
Vgs Max
±20V
Gate To Source Voltage Vgs
20V
Rise Time
15ns
Number Of Channels
1
Drain To Source Breakdown Voltage
-350V
Turn Off Delay Time
60 ns
Weight
453.59237mg
Yayın Yılı
2013
Rds On Max Id Vgs
15 Ω @ 300mA, 10V
Tepe Reflow Süresi (maks. sn)
NOT APPLICABLE
Qualification Status
Not Qualified
Power Dissipation
1W
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ambalaj
Bulk
Fall Time Typ
40 ns
Fet Type
P-Channel
Current Continuous Drain Id25
180mA Tj
Parça Durumu
Active
Çalışma Sıcaklığı
-55°C~150°C TJ
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Element Configuration
Single
Input Capacitance Ciss Max Vds
300pF @ 25V

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