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TP2535N3-G

Microchip Technology

TP2535N3-G

Single MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Power Dissipation
740mW
Qualification Status
Not Qualified
Rds On Max Id Vgs
25 Ω @ 100mA, 10V
Fall Time Typ
10 ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Drain To Source Breakdown Voltage
-350V
Weight
453.59237mg
Current Continuous Drain Id25
86mA Tj
Fet Type
P-Channel
Input Capacitance Ciss Max Vds
125pF @ 25V
JESD-609 Kodu
e3
Terminal Sayısı
3
Terminal Kaplaması
Matte Tin (Sn)
Montaj
Through Hole
Terminal Pozisyonu
BOTTOM
Fabrika Tedarik Süresi
5 Weeks
Uzunluk
5.21mm
Continuous Drain Current Id
-86mA
Genişlik
4.19mm
Drain Currentmax Abs Id
0.086A
Power Dissipation Max
740mW Ta
Turn On Delay Time
10 ns
Number Of Channels
1
Gate To Source Voltage Vgs
20V
Tepe Reflow Süresi (maks. sn)
NOT APPLICABLE
Ambalaj
Bulk
Turn Off Delay Time
20 ns
Yayın Yılı
2013
Parça Durumu
Active
Çalışma Sıcaklığı
-55°C~150°C TJ
Number Of Elements
1
RoHS Durumu
ROHS3 Compliant
Element Configuration
Single
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Operating Mode
ENHANCEMENT MODE
Drive Voltage Max Rds On Min Rds On
4.5V 10V
Transistor Application
SWITCHING
Yükseklik
5.33mm
Drain To Source Voltage Vdss
350V
Montaj Tipi
Through Hole

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