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TP2510N8-G

Microchip Technology

TP2510N8-G

Single MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Fabrika Tedarik Süresi
6 Weeks
Montaj
Surface Mount
Terminal Kaplaması
Matte Tin (Sn) - annealed
Genişlik
2.6mm
Power Dissipation Max
1.6W Ta
Continuous Drain Current Id
480mA
Uzunluk
4.6mm
Turn On Delay Time
10 ns
Gate To Source Voltage Vgs
20V
Pulsed Drain Currentmax Idm
2.5A
Number Of Channels
1
Weight
52.786812mg
Drain To Source Breakdown Voltage
-100V
Fall Time Typ
15 ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Power Dissipation
1.6W
Rds On Max Id Vgs
3.5 Ω @ 750mA, 10V
Fet Type
P-Channel
Current Continuous Drain Id25
480mA Tj
Input Capacitance Ciss Max Vds
125pF @ 25V
Case Connection
DRAIN
Terminal Sayısı
3
JESD-609 Kodu
e3
Vgsth Max Id
2.4V @ 1mA
Montaj Tipi
Surface Mount
Drain To Source Voltage Vdss
100V
Yükseklik
1.6mm
Pin Sayısı
4
Additional Feature
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Tepe Reflow Sıcaklığı (°C)
260
Jesd30 Code
R-PSSO-F3
ECCN Kodu
EAR99
Transistor Element Material
SILICON
Vgs Max
±20V
Terminal Formu
FLAT
Radyasyon Dayanımı
No
Rise Time
15ns
Yayın Yılı
2001
Turn Off Delay Time
20 ns
Ambalaj
Tape & Reel (TR)

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