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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Radyasyon Dayanımı
- No
- Rise Time
- 15ns
- Number Of Channels
- 1
- Gate To Source Voltage Vgs
- 20V
- Vgs Max
- ±20V
- Terminal Formu
- WIRE
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 10 ns
- ECCN Kodu
- EAR99
- Additional Feature
- LOW THRESHOLD
- Continuous Drain Current Id
- 320mA
- Pin Sayısı
- 3
- Uzunluk
- 5.21mm
- Genişlik
- 4.19mm
- Power Dissipation Max
- 1W Tc
- Terminal Kaplaması
- MATTE TIN
- Montaj Tipi
- Through Hole
- Vgsth Max Id
- 2.4V @ 1mA
- Yükseklik
- 5.33mm
- Drain To Source Voltage Vdss
- 60V
- Montaj
- Through Hole
- Terminal Pozisyonu
- BOTTOM
- Fabrika Tedarik Süresi
- 6 Weeks
- Operating Mode
- ENHANCEMENT MODE
- JESD-609 Kodu
- e3
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Transistor Application
- SWITCHING
- Terminal Sayısı
- 3
- Number Of Elements
- 1
- RoHS Durumu
- ROHS3 Compliant
- Element Configuration
- Single
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Input Capacitance Ciss Max Vds
- 150pF @ 25V
- Current Continuous Drain Id25
- 320mA Tj
- Parça Durumu
- Active
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- P-Channel
- Power Dissipation
- 1W
- Rds On Max Id Vgs
- 3.5 Ω @ 750mA, 10V
- Ambalaj
- Bulk
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