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TP0604N3-G

Microchip Technology

TP0604N3-G

Single MOSFETs Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Fet Type
P-Channel
Çalışma Sıcaklığı
-55°C~150°C TJ
Current Continuous Drain Id25
430mA Tj
Parça Durumu
Active
Weight
453.59237mg
Yayın Yılı
2012
Drain To Source Breakdown Voltage
-40V
Turn Off Delay Time
10 ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Ambalaj
Bulk
Fall Time Typ
6 ns
Rds On Max Id Vgs
2 Ω @ 1A, 10V
Power Dissipation
1W
Terminal Sayısı
3
Transistor Application
SWITCHING
Drive Voltage Max Rds On Min Rds On
5V 10V
JESD-609 Kodu
e3
Operating Mode
ENHANCEMENT MODE
Input Capacitance Ciss Max Vds
150pF @ 20V
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Element Configuration
Single
RoHS Durumu
ROHS3 Compliant
Number Of Elements
1
Power Dissipation Max
740mW Ta
Drain Currentmax Abs Id
0.75A
Genişlik
4.19mm
Continuous Drain Current Id
430mA
Pin Sayısı
3
Uzunluk
5.21mm
Additional Feature
LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
Fabrika Tedarik Süresi
7 Weeks
Terminal Pozisyonu
BOTTOM
Montaj
Through Hole
Montaj Tipi
Through Hole
Vgsth Max Id
2.4V @ 1mA
Yükseklik
5.33mm
Drain To Source Voltage Vdss
40V
Terminal Kaplaması
Matte Tin (Sn)
Gate To Source Voltage Vgs
20V
Vgs Max
±20V

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