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RoHS
Compliant
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Specifications
- Drain Currentmax Abs Id
- 0.57A
- Fet Type
- N-Channel
- Tepe Reflow Süresi (maks. sn)
- 40
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj
- Surface Mount
- Fabrika Tedarik Süresi
- 2 Weeks
- Input Capacitance Ciss Max Vds
- 125pF @ 25V
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Turn On Delay Time
- 20 ns
- Rise Time
- 15ns
- Rds On Max Id Vgs
- 12 Ω @ 500mA, 10V
- Montaj Tipi
- Surface Mount
- Drain To Source Breakdown Voltage
- 400V
- Contact Plating
- Tin
- Fall Time Typ
- 15 ns
- Uzunluk
- 4.6mm
- Continuous Drain Current Id
- 260mA
- Vgs Max
- ±20V
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- RoHS Durumu
- ROHS3 Compliant
- Terminal Sayısı
- 3
- Genişlik
- 2.6mm
- Current Continuous Drain Id25
- 260mA Tj
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Qualification Status
- Not Qualified
- Power Dissipation Max
- 1.6W Ta
- Power Dissipation
- 1.6W
- Yayın Yılı
- 2013
- Pin Sayısı
- 4
- Jesd30 Code
- R-PSSO-F3
- JESD-609 Kodu
- e3
- Gate To Source Voltage Vgs
- 20V
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- FLAT
- Element Configuration
- Single
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