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TN2425N8-G

Microchip Technology

TN2425N8-G

Single MOSFETs Transistors

RoHS: Compliant

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Compliant

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Specifications

Uzunluk
4.6mm
Continuous Drain Current Id
480mA
Rds On Max Id Vgs
3.5 Ω @ 500mA, 10V
Montaj Tipi
Surface Mount
Rise Time
10ns
Fall Time Typ
10 ns
Drain To Source Breakdown Voltage
250V
Drive Voltage Max Rds On Min Rds On
3V 10V
Radyasyon Dayanımı
No
Vgs Max
±20V
Fabrika Tedarik Süresi
6 Weeks
Input Capacitance Ciss Max Vds
200pF @ 25V
Montaj
Surface Mount
Turn On Delay Time
5 ns
Ambalaj
Tape & Reel (TR)
Number Of Elements
1
Fet Type
N-Channel
Tepe Reflow Süresi (maks. sn)
40
Çalışma Sıcaklığı
-55°C~150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Parça Durumu
Active
Transistor Element Material
SILICON
Yükseklik
1.6mm
Tepe Reflow Sıcaklığı (°C)
260
Element Configuration
Single
Case Connection
DRAIN
Gate To Source Voltage Vgs
20V
Operating Mode
ENHANCEMENT MODE
JESD-609 Kodu
e3
Terminal Formu
FLAT
Kılıf / Paket
TO-243AA
Number Of Channels
1
Additional Feature
LOGIC LEVEL COMPATIBLE
Vgsth Max Id
2.5V @ 1mA
Weight
52.786812mg
Turn Off Delay Time
25 ns
ECCN Kodu
EAR99
Transistor Application
SWITCHING
Current Continuous Drain Id25
480mA Tj
Power Dissipation Max
1.6W Tc

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