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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Vgs Max
- ±20V
- Radyasyon Dayanımı
- No
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Rise Time
- 5ns
- Rds On Max Id Vgs
- 2.5 Ω @ 500mA, 10V
- Montaj Tipi
- Surface Mount
- Drain To Source Breakdown Voltage
- 60V
- Contact Plating
- Tin
- Fall Time Typ
- 5 ns
- Uzunluk
- 2.9mm
- Continuous Drain Current Id
- 280mA
- Fet Type
- N-Channel
- Tepe Reflow Süresi (maks. sn)
- 40
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Montaj
- Surface Mount
- Input Capacitance Ciss Max Vds
- 50pF @ 25V
- Fabrika Tedarik Süresi
- 5 Weeks
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Turn On Delay Time
- 3 ns
- Drain Currentmax Abs Id
- 0.28A
- Feedback Capmax Crss
- 8 pF
- Additional Feature
- LOW THRESHOLD, LOGIC LEVEL COMPATIBLE
- Number Of Channels
- 1
- Turn Off Delay Time
- 6 ns
- Terminal Pozisyonu
- DUAL
- Vgsth Max Id
- 2V @ 1mA
- Weight
- 1.437803g
- Kılıf / Paket
- TO-236-3, SC-59, SOT-23-3
- JESD-609 Kodu
- e3
- Gate To Source Voltage Vgs
- 20V
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- GULL WING
- Element Configuration
- Single
- Yükseklik
- 950μm
- Tepe Reflow Sıcaklığı (°C)
- 260
- Power Dissipation
- 360mW
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