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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2013
- Parça Durumu
- Active
- Transistor Element Material
- SILICON
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Type
- N-Channel
- Drain To Source Voltage Vdss
- 200V
- Ambalaj
- Tape & Reel (TR)
- Number Of Elements
- 1
- Turn On Delay Time
- 10 ns
- Montaj
- Through Hole
- Pin Sayısı
- 3
- Input Capacitance Ciss Max Vds
- 150pF @ 25V
- Fabrika Tedarik Süresi
- 6 Weeks
- Drain Currentmax Abs Id
- 0.25A
- Terminal Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Genişlik
- 4.19mm
- Ds Breakdown Voltagemin
- 200V
- Power Dissipation Max
- 1W Tc
- Current Continuous Drain Id25
- 250mA Tj
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 6Ohm
- Transistor Application
- SWITCHING
- Vgs Max
- ±20V
- Turn Off Delay Time
- 20 ns
- Terminal Pozisyonu
- BOTTOM
- Vgsth Max Id
- 1.6V @ 1mA
- Weight
- 453.59237mg
- Number Of Channels
- 1
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Fall Time Typ
- 20 ns
- Rise Time
- 8ns
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 6 Ω @ 500mA, 10V
- Montaj Tipi
- Through Hole
- Operating Mode
- ENHANCEMENT MODE
- Element Configuration
- Single
- Yükseklik
- 5.33mm
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