TN0610N3-G

Specifications

Continuous Drain Current Id

500mA

Element Configuration

Single

Fall Time Typ

16 ns

Contact Plating

Tin

Drain To Source Breakdown Voltage

100V

Montaj Tipi

Through Hole

Operating Mode

ENHANCEMENT MODE

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

1.5 Ω @ 750mA, 10V

Rise Time

14ns

JESD-609 Kodu

e3

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Drive Voltage Max Rds On Min Rds On

3V 10V

Radyasyon Dayanımı

No

Vgsth Max Id

2V @ 1mA

Weight

453.59237mg

Terminal Pozisyonu

BOTTOM

Turn Off Delay Time

16 ns

Vgs Max

±20V

Number Of Channels

1

Additional Feature

LOW THRESHOLD, LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE

Power Dissipation Max

1W Tc

Transistor Application

SWITCHING

Drainsource On Resistancemax

2Ohm

ECCN Kodu

EAR99

Current Continuous Drain Id25

500mA Tj

Drain Currentmax Abs Id

0.5A

Terminal Sayısı

3

RoHS Durumu

ROHS3 Compliant

Turn On Delay Time

6 ns

Number Of Elements

1

Ambalaj

Bulk

Fabrika Tedarik Süresi

20 Weeks

Input Capacitance Ciss Max Vds

150pF @ 25V

Pin Sayısı

3

Montaj

Through Hole

Nem Hassasiyeti (MSL)

1 (Unlimited)

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Element Material

SILICON

Yayın Yılı

2013