TN0604N3-G-P013

Specifications

Drive Voltage Max Rds On Min Rds On

5V 10V

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Number Of Channels

1

Additional Feature

HIGH INPUT IMPEDANCE

Terminal Pozisyonu

BOTTOM

Weight

453.59237mg

Vgsth Max Id

1.6V @ 1mA

Vgs Max

±20V

Turn Off Delay Time

25 ns

Yükseklik

5.33mm

Uzunluk

5.21mm

Continuous Drain Current Id

700mA

Element Configuration

Single

Gate To Source Voltage Vgs

20V

Rds On Max Id Vgs

750m Ω @ 1.5A, 10V

Operating Mode

ENHANCEMENT MODE

Montaj Tipi

Through Hole

Rise Time

6ns

Fall Time Typ

20 ns

Drain To Source Breakdown Voltage

40V

Input Capacitance Ciss Max Vds

190pF @ 20V

Fabrika Tedarik Süresi

6 Weeks

Jesd30 Code

O-PBCY-T3

Montaj

Through Hole

Turn On Delay Time

10 ns

Ambalaj

Tape & Box (TB)

Number Of Elements

1

Fet Type

N-Channel

Çalışma Sıcaklığı

-55°C~150°C TJ

Nem Hassasiyeti (MSL)

1 (Unlimited)

Parça Durumu

Active

Yayın Yılı

2013

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Drainsource On Resistancemax

0.75Ohm

Transistor Application

SWITCHING

Current Continuous Drain Id25

700mA Tj

Power Dissipation Max

740mW Ta

Feedback Capmax Crss

50 pF

RoHS Durumu

ROHS3 Compliant