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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Breakdown Voltage
- 40V
- Fall Time Typ
- 20 ns
- Rise Time
- 6ns
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 750m Ω @ 1.5A, 10V
- Element Configuration
- Single
- Continuous Drain Current Id
- 700mA
- Yükseklik
- 5.33mm
- Uzunluk
- 5.21mm
- Turn Off Delay Time
- 25 ns
- Vgs Max
- ±20V
- Vgsth Max Id
- 1.6V @ 1mA
- Weight
- 453.59237mg
- Terminal Pozisyonu
- BOTTOM
- Additional Feature
- HIGH INPUT IMPEDANCE
- Number Of Channels
- 1
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Drive Voltage Max Rds On Min Rds On
- 5V 10V
- Drain Currentmax Abs Id
- 0.7A
- Genişlik
- 4.19mm
- Terminal Sayısı
- 3
- RoHS Durumu
- ROHS3 Compliant
- Feedback Capmax Crss
- 50 pF
- Power Dissipation Max
- 740mW Ta
- Current Continuous Drain Id25
- 700mA Tj
- ECCN Kodu
- EAR99
- Drainsource On Resistancemax
- 0.75Ohm
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Parça Durumu
- Active
- Yayın Yılı
- 2013
- Terminal Kaplaması
- Matte Tin (Sn)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Type
- N-Channel
- Power Dissipation
- 740mW
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