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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Number Of Channels
- 1
- Turn Off Delay Time
- 6 ns
- Vgs Max
- ±20V
- Vgsth Max Id
- 2V @ 500μA
- Weight
- 453.59237mg
- Terminal Pozisyonu
- BOTTOM
- Radyasyon Dayanımı
- No
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA)
- Drive Voltage Max Rds On Min Rds On
- 4.5V 10V
- Rise Time
- 3ns
- JESD-609 Kodu
- e3
- Montaj Tipi
- Through Hole
- Operating Mode
- ENHANCEMENT MODE
- Gate To Source Voltage Vgs
- 20V
- Rds On Max Id Vgs
- 3 Ω @ 500mA, 10V
- Kurşunsuz
- Lead Free
- Drain To Source Breakdown Voltage
- 100V
- Fall Time Typ
- 3 ns
- Element Configuration
- Single
- Continuous Drain Current Id
- 350mA
- Yükseklik
- 5.33mm
- Uzunluk
- 5.21mm
- Fet Type
- N-Channel
- Power Dissipation
- 1W
- Transistor Element Material
- SILICON
- Yayın Yılı
- 2011
- Terminal Kaplaması
- Matte Tin (Sn)
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Montaj
- Through Hole
- Fabrika Tedarik Süresi
- 6 Weeks
- Input Capacitance Ciss Max Vds
- 60pF @ 25V
- Pin Sayısı
- 3
- Number Of Elements
- 1
- Ambalaj
- Bulk
- Turn On Delay Time
- 2 ns
- Genişlik
- 4.19mm
- RoHS Durumu
- ROHS3 Compliant
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