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TN0104N3-G

Microchip Technology

TN0104N3-G

Single MOSFETs Transistors

RoHS: Compliant

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Specifications

Power Dissipation Max
1W Tc
Current Continuous Drain Id25
450mA Ta
ECCN Kodu
EAR99
Transistor Application
SWITCHING
Drain Currentmax Abs Id
0.45A
Terminal Sayısı
3
RoHS Durumu
ROHS3 Compliant
Genişlik
4.19mm
Ambalaj
Bulk
Number Of Elements
1
Turn On Delay Time
3 ns
Montaj
Through Hole
Pin Sayısı
3
Input Capacitance Ciss Max Vds
70pF @ 20V
Fabrika Tedarik Süresi
9 Weeks
Terminal Kaplaması
Matte Tin (Sn)
Yayın Yılı
2013
Parça Durumu
Active
Transistor Element Material
SILICON
Nem Hassasiyeti (MSL)
1 (Unlimited)
Çalışma Sıcaklığı
-55°C~150°C TJ
Fet Type
N-Channel
Power Dissipation
1W
Element Configuration
Single
Yükseklik
5.33mm
Uzunluk
5.21mm
Continuous Drain Current Id
450mA
Drain To Source Breakdown Voltage
40V
Fall Time Typ
5 ns
JESD-609 Kodu
e3
Rise Time
7ns
Gate To Source Voltage Vgs
20V
Rds On Max Id Vgs
1.8 Ω @ 1A, 10V
Montaj Tipi
Through Hole
Operating Mode
ENHANCEMENT MODE
Radyasyon Dayanımı
No
Kılıf / Paket
TO-226-3, TO-92-3 (TO-226AA)
Drive Voltage Max Rds On Min Rds On
3V 10V
Vgs Max
±20V
Turn Off Delay Time
6 ns

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