Volume pricing
- 1+ pcs$20.87
- 10+ pcs$19.69
- 100+ pcs$18.57
- 500+ pcs$17.52
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Channels
- 1 Channel
- Rds On Drainsource Resistance
- 40 mOhms
- Ürün Tipi
- MOSFET
- Rise Time
- 10 ns, 13 ns
- Typical Turnoff Delay Time
- 44 ns, 46 ns
- Input Capacitance Ciss Max Vds
- 1990 pF @ 1000 V
- Channel Mode
- Enhancement
- Drain To Source Voltage Vdss
- 1200 V
- Id Continuous Drain Current
- 64 A
- RoHS
- Details
- Vgs Th Gatesource Threshold Voltage
- 2.6 V
- Transistor Polarity
- N-Channel
- Fabrika Paket Adedi
- 400
- Minimum Operating Temperature
- - 55 C
- Pd Power Dissipation
- 303 W
- Ambalaj
- Reel
- Ürün Durumu
- Active
- Kılıf / Paket
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Drive Voltage Max Rds On Min Rds On
- 20V
- Vgs Gatesource Voltage
- - 10 V, + 23 V
- Typical Turnon Delay Time
- 23 ns, 24 ns
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Montaj Stili
- SMD/SMT
- Vgsth Max Id
- 2.6V @ 2mA
- Tedarikçi Cihaz Paketi
- TO-268
- Vds Drainsource Breakdown Voltage
- 1.2 kV
- Maks. Çalışma Sıcaklığı
- + 175 C
- Power Dissipation Max
- 303W (Tc)
- Transistor Type
- 1 N-Channel
- Montaj Tipi
- Surface Mount
- Qg Gate Charge
- 137 nC
- Vgs Max
- +23V, -10V
- Fet Type
- N-Channel
- Current Continuous Drain Id25
- 64A (Tc)
- Rds On Max Id Vgs
- 50mOhm @ 40A, 20V
- Gate Charge Qg Max Vgs
- 137 nC @ 20 V
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