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Specifications
- Transistor Polarity
- P-Channel
- Pd Power Dissipation
- 500 mW
- Voltage Cutoff Vgs Off Id
- 3 V @ 1 nA
- Voltage Breakdown Vbrgss
- 30 V
- Drainsource Current At Vgs0
- 7 mA
- Input Capacitance Ciss Max Vds
- 25pF @ 15V
- Kılıf / Paket
- TO-206AA, TO-18-3 Metal Can
- Çalışma Sıcaklığı
- -65°C ~ 200°C (TJ)
- Paket
- Bulk
- Seri
- Military, MIL-PRF-19500
- Rds On Drainsource Resistance
- 100 Ohms
- Current Drain Idss Vds Vgs0
- 15 mA @ 15 V
- Maximum Drain Gate Voltage
- 30 V
- Fet Type
- P-Channel
- Ürün Durumu
- Active
- Fabrika Paket Adedi
- 1
- Tip
- JFET
- Maks. Çalışma Sıcaklığı
- + 200 C
- Minimum Operating Temperature
- - 65 C
- Gatesource Cutoff Voltage
- 6 V
- Montaj Stili
- Through Hole
- Vds Drainsource Breakdown Voltage
- 30 V
- Technology
- Si
- Tedarikçi Cihaz Paketi
- TO-18 (TO-206AA)
- Vgs Gatesource Breakdown Voltage
- 30 V
- Drain To Source Voltage Vdss
- 30 V
- Montaj Tipi
- Through Hole
- Configuration
- Single
- Resistance Rdson
- 100 Ohms
- Ürün Tipi
- JFETs
- Power Max
- 500 mW
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