MQ2N4857UB/TR

Specifications

Transistor Polarity

N-Channel

Fet Type

N-Channel

Voltage Breakdown Vbrgss

40 V

Tedarikçi Cihaz Paketi

TO-18 (TO-206AA)

Power Max

360 mW

Resistance Rdson

40 Ohms

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Ürün Durumu

Active

Montaj Tipi

Through Hole

Technology

Si

Rds On Drainsource Resistance

40 Ohms

Vds Drainsource Breakdown Voltage

40 V

Maximum Drain Gate Voltage

40 V

RoHS

Details

Fabrika Paket Adedi

1

Vgs Gatesource Breakdown Voltage

- 40 V

Kılıf / Paket

TO-206AA, TO-18-3 Metal Can

Drainsource Current At Vgs0

100 mA

Pd Power Dissipation

1.8 W

Input Capacitance Ciss Max Vds

18pF @ 10V

Maks. Çalışma Sıcaklığı

+ 200 C

Montaj Stili

Through Hole

Ürün Tipi

JFETs

Drain To Source Voltage Vdss

40 V

Paket

Tape & Reel (TR)

Gatesource Cutoff Voltage

- 6 V

Current Drain Idss Vds Vgs0

20 mA @ 15 V

Configuration

Single

Minimum Operating Temperature

- 65 C

Voltage Cutoff Vgs Off Id

2 V @ 500 pA