LND150N3-G-P013

Specifications

Yükseklik

5.33mm

Weight

453.59237mg

Fet Type

N-Channel

Uzunluk

5.21mm

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

0.03A

Ambalaj

Tape & Box (TB)

Transistor Element Material

SILICON

Fet Feature

Depletion Mode

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Fabrika Tedarik Süresi

8 Weeks

Drive Voltage Max Rds On Min Rds On

0V

Rds On Max Id Vgs

1000 Ω @ 500μA, 0V

Montaj

Through Hole

Rise Time

450ns

Terminal Pozisyonu

BOTTOM

Yayın Yılı

2014

Drain To Source Voltage Vdss

500V

Vgs Max

±20V

Transistor Application

SWITCHING

Terminal Sayısı

3

Element Configuration

Single

Current Continuous Drain Id25

30mA Tj

Number Of Elements

1

Jesd30 Code

O-PBCY-T3

Input Capacitance Ciss Max Vds

10pF @ 25V

Parça Durumu

Active

Kurşunsuz Kodu

yes

Turn On Delay Time

90 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn Off Delay Time

100 ns

Power Dissipation Max

740mW Ta

Number Of Channels

1

Montaj Tipi

Through Hole

Genişlik

4.19mm

Continuous Drain Current Id

30mA

Fall Time Typ

1.3 μs

Çalışma Sıcaklığı

-55°C~150°C TJ

Ds Breakdown Voltagemin

500V