LND150N3-G-P003

Specifications

Terminal Sayısı

3

Element Configuration

Single

Terminal Pozisyonu

BOTTOM

Yayın Yılı

2014

Rise Time

450ns

Transistor Application

SWITCHING

Vgs Max

±20V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

90 ns

Turn Off Delay Time

100 ns

Input Capacitance Ciss Max Vds

10pF @ 25V

Number Of Elements

1

Contact Plating

Tin

Current Continuous Drain Id25

30mA Tj

Kurşunsuz Kodu

yes

Parça Durumu

Active

Montaj Tipi

Through Hole

Fall Time Typ

1.3 μs

Genişlik

4.19mm

Continuous Drain Current Id

30mA

Number Of Channels

1

Power Dissipation Max

740mW Ta

Drain To Source Breakdown Voltage

500V

Çalışma Sıcaklığı

-55°C~150°C TJ

Yükseklik

5.33mm

Gate To Source Voltage Vgs

20V

RoHS Durumu

ROHS3 Compliant

Uzunluk

5.21mm

Fet Type

N-Channel

Weight

453.59237mg

Pin Sayısı

3

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Fet Feature

Depletion Mode

Fabrika Tedarik Süresi

8 Weeks

Ambalaj

Tape & Reel (TR)

Transistor Element Material

SILICON

Rds On Max Id Vgs

1000 Ω @ 500μA, 0V

Montaj

Through Hole

Drive Voltage Max Rds On Min Rds On

0V