LND150N3-G-P002

Specifications

Drive Voltage Max Rds On Min Rds On

0V

Montaj

Through Hole

Rds On Max Id Vgs

1000 Ω @ 500μA, 0V

Transistor Element Material

SILICON

Ambalaj

Tape & Reel (TR)

Fabrika Tedarik Süresi

8 Weeks

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Fet Feature

Depletion Mode

Fet Type

N-Channel

Weight

453.59237mg

Drain Currentmax Abs Id

0.03A

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Uzunluk

5.21mm

Yükseklik

5.33mm

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

500V

Number Of Channels

1

Power Dissipation Max

740mW Ta

Fall Time Typ

1.3 μs

Genişlik

4.19mm

Continuous Drain Current Id

30mA

Montaj Tipi

Through Hole

Kurşunsuz Kodu

yes

Parça Durumu

Active

Input Capacitance Ciss Max Vds

10pF @ 25V

Jesd30 Code

O-PBCY-T3

Current Continuous Drain Id25

30mA Tj

Number Of Elements

1

Turn Off Delay Time

100 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

90 ns

Transistor Application

SWITCHING

Vgs Max

±20V

Yayın Yılı

2014

Terminal Pozisyonu

BOTTOM

Rise Time

450ns

Element Configuration

Single

Terminal Sayısı

3