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LND01K1-G

Microchip Technology

LND01K1-G

Single MOSFETs Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$0.50
  • 10+ pcs$0.48
  • 100+ pcs$0.45
  • 500+ pcs$0.42

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Compliant

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Specifications

Terminal Pozisyonu
DUAL
Yayın Yılı
2014
Rise Time
11ns
Transistor Application
SWITCHING
Vgs Max
+0.6V, -12V
Terminal Formu
GULL WING
Element Configuration
Single
Terminal Sayısı
5
Input Capacitance Ciss Max Vds
46pF @ 5V
Number Of Elements
1
Current Continuous Drain Id25
330mA Tj
Parça Durumu
Active
Tepe Reflow Süresi (maks. sn)
40
Nem Hassasiyeti (MSL)
1 (Unlimited)
Turn On Delay Time
3.8 ns
Turn Off Delay Time
1 ns
Number Of Channels
1
Power Dissipation Max
360mW Ta
Drain To Source Breakdown Voltage
9V
Montaj Tipi
Surface Mount
Fall Time Typ
6.4 ns
Continuous Drain Current Id
330mA
Çalışma Sıcaklığı
-25°C~125°C TJ
JESD-609 Kodu
e3
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
260
Fet Type
N-Channel
Weight
29.993795mg
Pin Sayısı
5
Gate To Source Voltage Vgs
600mV
RoHS Durumu
ROHS3 Compliant
Drain Currentmax Abs Id
0.33A
Ambalaj
Tape & Reel (TR)
Transistor Element Material
SILICON
Kılıf / Paket
SC-74A, SOT-753
Fet Feature
Depletion Mode
Kurşunsuz
Lead Free
Fabrika Tedarik Süresi
6 Weeks
Power Dissipation
360mW
Drive Voltage Max Rds On Min Rds On
0V

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