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Microchip Technology

JANSR2N3501UB/TR

Single BJT Transistors

RoHS: Compliant

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Specifications

Dc Current Gain Hfe Max
8
Ürün Durumu
Active
Configuration
Single
Collectoremitter Saturation Voltage
400 mV
Collector Emitter Voltage Vceo Max
150 V
Pd Power Dissipation
500 mW
Collector Base Voltage Vcbo
150 V
Minimum Operating Temperature
- 65 C
Montaj Stili
SMD/SMT
Continuous Collector Current
300 mA
Transistor Polarity
NPN
Fabrika Paket Adedi
1
Dc Collectorbase Gain Hfe Min
1.5
Emitter Base Voltage Vebo
6 V
Technology
Si
Kılıf / Paket
SMD-4
RoHS
N
Paket
Bulk
Maks. Çalışma Sıcaklığı
+ 200 C
Ürün Tipi
BJTs - Bipolar Transistors

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