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Microchip Technology

JANS2N3637UB/TR

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$102.95
  • 10+ pcs$97.12
  • 100+ pcs$91.62
  • 500+ pcs$86.44

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RoHS

Compliant

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Specifications

Kılıf / Paket
3-SMD, No Lead
Maximum Dc Collector Current
1 A
Emitter Base Voltage Vebo
5 V
Pd Power Dissipation
1.5 W
Seri
Military, MIL-PRF-19500/357
Currentcollector Ic Max
1 A
Ürün Tipi
BJTs - Bipolar Transistors
Collector Base Voltage Vcbo
175 V
Dc Current Gain Hfe Min Ic Vce
100 @ 50mA, 10V
Montaj
Through Hole
Pin Sayısı
3
Max Collector Current
1 A
Maks. Çalışma Sıcaklığı
+ 200 C
Current Collector Cutoff Max
10μA
Montaj Stili
SMD/SMT
Paket
Tape & Reel (TR)
Power Max
1.5 W
Voltage Collector Emitter Breakdown Max
175 V
Çalışma Sıcaklığı
-65°C ~ 200°C (TJ)
Minimum Operating Temperature
- 65 C
Maks. Çalışma Sıcaklığı
200 °C
Dc Current Gain Hfe Max
300 at - 50 mA, - 10 V
Fabrika Paket Adedi
1
Dc Collectorbase Gain Hfe Min
55 at 100 uA, 10 V
Collector Emitter Voltage Vceo
175 V
Vce Saturation Max Ib Ic
600mV @ 5mA, 50mA
Collector Emitter Voltage Vceo Max
175 V
Configuration
Single
Max Power Dissipation
1 W
Montaj Tipi
Surface Mount
Tedarikçi Cihaz Paketi
UB
Technology
Si
Transistor Polarity
PNP
Ürün Durumu
Active
Transistor Type
PNP
Min. Çalışma Sıcaklığı
-65 °C
RoHS
Non-Compliant
Collectoremitter Saturation Voltage
300 mV

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