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Microchip Technology

JANS2N2369AUB/TR

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Çalışma Sıcaklığı
-65°C ~ 200°C (TJ)
Minimum Operating Temperature
- 65 C
Voltage Collector Emitter Breakdown Max
20 V
Vce Saturation Max Ib Ic
450mV @ 10mA, 100mA
Collector Emitter Voltage Vceo Max
15 V
Dc Collectorbase Gain Hfe Min
20 at 100mA, 1 V
Fabrika Paket Adedi
1
Dc Current Gain Hfe Max
120 at 100 mA, 1 V
Technology
Si
Configuration
Single
Montaj Tipi
Surface Mount
Tedarikçi Cihaz Paketi
UB
Transistor Type
NPN
RoHS
N
Collectoremitter Saturation Voltage
200 mV
Transistor Polarity
NPN
Ürün Durumu
Active
Maximum Dc Collector Current
100 mA
Emitter Base Voltage Vebo
4.5 V
Kılıf / Paket
3-SMD, No Lead
Collector Base Voltage Vcbo
40 V
Dc Current Gain Hfe Min Ic Vce
20 @ 100mA, 1V
Pd Power Dissipation
360 mW
Seri
Military, MIL-PRF-19500/317
Ürün Tipi
BJTs - Bipolar Transistors
Maks. Çalışma Sıcaklığı
+ 200 C
Current Collector Cutoff Max
400nA
Montaj Stili
SMD/SMT
Paket
Tape & Reel (TR)
Power Max
360 mW

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