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Microchip Technology

JANS2N2369AUA/TR

Single BJT Transistors

In StockRoHS: Compliant
Volume pricing
  • 1+ pcs$68.94
  • 10+ pcs$65.04
  • 100+ pcs$61.36
  • 500+ pcs$57.89

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RoHS

Compliant

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Specifications

Power Max
360 mW
Paket
Tape & Reel (TR)
Maks. Çalışma Sıcaklığı
+ 200 C
Montaj Stili
SMD/SMT
Current Collector Cutoff Max
400nA
Collector Base Voltage Vcbo
40 V
Dc Current Gain Hfe Min Ic Vce
40 @ 10mA, 1V
Currentcollector Ic Max
400 nA
Seri
Military, MIL-PRF-19500/317
Pd Power Dissipation
360 mW
Ürün Tipi
BJTs - Bipolar Transistors
Emitter Base Voltage Vebo
4.5 V
Maximum Dc Collector Current
100 mA
Kılıf / Paket
4-SMD, No Lead
Transistor Type
NPN
Collectoremitter Saturation Voltage
200 mV
RoHS
N
Ürün Durumu
Active
Transistor Polarity
NPN
Technology
Si
Configuration
Single
Tedarikçi Cihaz Paketi
UA
Montaj Tipi
Surface Mount
Vce Saturation Max Ib Ic
450mV @ 10mA, 100mA
Collector Emitter Voltage Vceo Max
15 V
Fabrika Paket Adedi
1
Dc Collectorbase Gain Hfe Min
20 at 100mA, 1 V
Dc Current Gain Hfe Max
120 at 100 mA, 1 V
Minimum Operating Temperature
- 65 C
Çalışma Sıcaklığı
-65°C ~ 200°C (TJ)
Voltage Collector Emitter Breakdown Max
15 V

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