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Microchip Technology

JAN2N6058

Single BJT Transistors

RoHS: Compliant

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RoHS

Compliant

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Specifications

Dc Current Gain Hfe Min Ic Vce
1000 @ 6A, 3V
Lifecycle Status
Production (Last Updated: 2 months ago)
Polarity
NPN
Ambalaj
Tray
Ürün Durumu
Active
Çalışma Sıcaklığı
-55°C ~ 175°C (TJ)
Collector Base Voltage Vcbo
80 V
Tedarikçi Cihaz Paketi
TO-3 (TO-204AA)
Min. Çalışma Sıcaklığı
-55 °C
Collector Emitter Voltage Vceo
80 V
Transistor Type
NPN - Darlington
Montaj
Through Hole
Contact Plating
Lead, Tin
Paket
Bulk
Vce Saturation Max Ib Ic
3V @ 120mA, 12A
Power Max
150 W
Number Of Elements
1
Currentcollector Ic Max
12 A
Emitter Base Voltage Vebo
5 V
Seri
Military, MIL-PRF-19500/502
Montaj Tipi
Through Hole
RoHS
N
Temel Ürün No
2N6058
Ürün Tipi
Darlington Transistors
Voltage Collector Emitter Breakdown Max
80 V
Maks. Çalışma Sıcaklığı
175 °C
Collectoremitter Saturation Voltage
3 V
Element Configuration
Single
Kılıf / Paket
TO-3
Fabrika Paket Adedi
1
Current Collector Cutoff Max
1mA

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